Electronic Microcircuits: PL7141077-00, PL7141089-00, PL7142010-101
| MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
|---|---|---|---|---|---|
| PL7141077-00 PL714107700 | 5962-01-413-0069 | Microcircuit, Memory | (Non-Core Data) bit Quantity: 131072 Memory Device Type: Eprom Part Name Assigned By Controlling Agency: Programmed 7C251-45 eprom | Lockheed Martin Corporation (90536) | |
| PL7141078-00 PL714107800 | 5962-01-413-0059 | Microcircuit, Memory | Memory Device Type: PAL Part Name Assigned By Controlling Agency: Programmed PALC16L8-25 | Lockheed Martin Corporation (90536) | |
| PL7141079-00 PL714107900 | 5962-01-413-0063 | Microcircuit, Memory | (Non-Core Data) bit Quantity: 131072 Memory Device Type: ROM Part Name Assigned By Controlling Agency: Programmed 7C251-45, eprom cmos | Lockheed Martin Corporation (90536) | |
| PL7141080-00 PL714108000 | 5962-01-413-0068 | Microcircuit, Memory | (Non-Core Data) bit Quantity: 131072 Memory Device Type: ROM Part Name Assigned By Controlling Agency: Programmed 7C251-45, eprom cmos | Lockheed Martin Corporation (90536) | |
| PL7141081-00 PL714108100 | 5962-01-413-0064 | Microcircuit, Memory | (Non-Core Data) bit Quantity: 131072 Memory Device Type: ROM Part Name Assigned By Controlling Agency: Programmed 7C251-45, eprom cmos | Lockheed Martin Corporation (90536) | |
| PL7141082-00 PL714108200 | 5962-01-413-0066 | Microcircuit, Memory | (Non-Core Data) bit Quantity: 131072 Memory Device Type: ROM Part Name Assigned By Controlling Agency: Programmed 7C251-45, eprom cmos | Lockheed Martin Corporation (90536) | |
| PL7141083-00 PL714108300 | 5962-01-413-0065 | Microcircuit, Memory | (Non-Core Data) bit Quantity: 131072 Memory Device Type: ROM Part Name Assigned By Controlling Agency: Programmed 7C251-45, eprom cmos | Lockheed Martin Corporation (90536) | |
| PL7141084-00 PL714108400 | 5962-01-413-0067 | Microcircuit, Memory | (Non-Core Data) bit Quantity: 131072 Memory Device Type: ROM Part Name Assigned By Controlling Agency: Programmed 7C251-45, eprom cmos | Lockheed Martin Corporation (90536) | |
| PL7141085-00 PL714108500 | 5962-01-413-0062 | Microcircuit, Memory | (Non-Core Data) bit Quantity: 256 Memory Device Type: ROM Part Name Assigned By Controlling Agency: Programmed 27S19SA prom | Lockheed Martin Corporation (90536) | |
| PL7141086-00 PL714108600 | 5962-01-412-9891 | Microcircuit, Memory | (Non-Core Data) bit Quantity: 256 Memory Device Type: ROM Part Name Assigned By Controlling Agency: Programmed 27S19SA prom | Lockheed Martin Corporation (90536) | |
| PL7141088-00 PL714108800 | 5962-01-412-9890 | Microcircuit, Memory | Memory Device Type: PAL Part Name Assigned By Controlling Agency: Programmed PAL16R8D/16R8-15 | Lockheed Martin Corporation (90536) | |
| PL7141089-00 PL714108900 | 5962-01-412-9906 | Microcircuit, Memory | Memory Device Type: PAL Part Name Assigned By Controlling Agency: Programmed PAL16R8D/16R8-15 | Lockheed Martin Corporation (90536) | |
| PL7141090-00 PL714109000 | 5962-01-412-9898 | Microcircuit, Memory | Memory Device Type: PAL Part Name Assigned By Controlling Agency: Programmed PAL16R8D/16R8-15 | Lockheed Martin Corporation (90536) | |
| PL7141091-00 PL714109100 | 5962-01-412-9907 | Microcircuit, Memory | (Non-Core Data) bit Quantity: 8192 Memory Device Type: ROM Part Name Assigned By Controlling Agency: Programmed | Lockheed Martin Corporation (90536) | |
| PL7141121-00 PL714112100 | 5962-01-412-9896 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Inclosure Material: Ceramic | Lockheed Martin Corporation (90536) | |
| PL7141125-00 PL714112500 | 5962-01-412-9894 | Microcircuit, Memory | Memory Device Type: PAL Part Name Assigned By Controlling Agency: Programmed | Lockheed Martin Corporation (90536) | |
| PL7142007-103 PL7142007103 | 5962-01-436-3530 | Microcircuit, Memory | Features Provided: Programmed Time Rating per Chacteristic: 200.00 nanoseconds maximum input to output access Special Features: 128K X 8 uvprom | Lockheed Martin Corporation (90536) | |
| PL7142008-103 PL7142008103 | 5962-01-436-3532 | Microcircuit, Memory | Features Provided: Programmed Time Rating per Chacteristic: 200.00 nanoseconds maximum input to output access Special Features: 128K X 8 uvprom | Lockheed Martin Corporation (90536) | |
| PL7142009-100 PL7142009100 | 5962-01-436-3333 | Microcircuit, Memory | Features Provided: Programmed Part Name Assigned By Controlling Agency: F245 enable control, pal | Lockheed Martin Corporation (90536) | |
| PL7142010-101 PL7142010101 | 5962-01-436-3342 | Microcircuit, Memory | Features Provided: Programmed Part Name Assigned By Controlling Agency: Dign flt lch & mem bus err, pal device | Lockheed Martin Corporation (90536) |