Electronic Microcircuits: IDT6167SA70LB, IDT6168LA25DB, IDT6168LA-70DBRT
MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
---|---|---|---|---|---|
IDT6167SA70LB | 5962-01-420-8919 | Microcircuit, Memory | Integrated Device Technology Inc. (61772) | ||
IDT6168L55DB | 5962-01-248-3547 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and electrostatic sensitive and high speed and low power | Integrated Device Technology Inc. (61772) | |
IDT6168L55FB | 5962-01-248-3548 | Microcircuit, Memory | Inclosure Configuration: Flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and electrostatic sensitive and high speed and low power | Integrated Device Technology Inc. (61772) | |
IDT6168L70CB | 5962-01-292-2632 | Microcircuit, Digital | Integrated Device Technology Inc. (61772) | ||
IDT6168LA | 5962-01-354-7815 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Static operation and monolithic and W/enable and bidirectional | Integrated Device Technology Inc. (61772) | |
IDT6168LA100DB | 5962-01-330-7341 | Microcircuit, Digital | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Static operation and high speed and low power and high performance and high reliability and bidirectional and 3-STATE output and burn in, MIL-STD-883, class b | Integrated Device Technology Inc. (61772) | |
IDT6168LA-25D IDT6168LA25D | 5962-01-357-9822 | Microcircuit, Memory | Output Logic Form: Complementary-metal oxide-semiconductor logic Memory Device Type: RAM | Integrated Device Technology Inc. (61772) | |
IDT6168LA25DB | 5962-01-262-1271 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic and static operation | Integrated Device Technology Inc. (61772) | |
IDT6168LA35DB | 5962-01-262-1275 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic and static operation | Integrated Device Technology Inc. (61772) | |
IDT6168LA-35DBRT IDT6168LA35DBRT | 5962-01-351-7276 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and electrostatic sensitive and programmed | Integrated Device Technology Inc. (61772) | |
IDT6168LA45DB | 5962-01-262-1279 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic and static operation | Integrated Device Technology Inc. (61772) | |
IDT6168LA45EB | 5962-01-365-3860 | Microcircuit, Memory | Integrated Device Technology Inc. (61772) | ||
IDT6168LA55DB | 5962-01-248-3547 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and electrostatic sensitive and high speed and low power | Integrated Device Technology Inc. (61772) | |
IDT6168LA55DB | 5962-01-262-1755 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic and static operation | Integrated Device Technology Inc. (61772) | |
IDT6168LA-55DBRT IDT6168LA55DBRT | 5962-01-351-5741 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Static operation and hermetically sealed and bidirectional | Integrated Device Technology Inc. (61772) | |
IDT6168LA55EB | 5962-01-326-7535 | Microcircuit, Memory | Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic Voltage Rating and Type per Characteristic: 5.0 volts nominal power source | Integrated Device Technology Inc. (61772) | |
IDT6168LA55EBRT | 5962-01-355-9123 | Microcircuit, Digital | III End Item Identification: Milstar Special Features: Esd and hci; rad hardness IAW:ESD-82-TE-1390B Criticality Code Justification: FEAT | Integrated Device Technology Inc. (61772) | |
IDT6168LA55FB | 5962-01-248-3548 | Microcircuit, Memory | Inclosure Configuration: Flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and electrostatic sensitive and high speed and low power | Integrated Device Technology Inc. (61772) | |
IDT6168LA55FB | 5962-01-326-7535 | Microcircuit, Memory | Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic Voltage Rating and Type per Characteristic: 5.0 volts nominal power source | Integrated Device Technology Inc. (61772) | |
IDT6168LA70DB | 5962-01-262-1759 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic and static operation | Integrated Device Technology Inc. (61772) | |
IDT6168LA70DB/883B IDT6168LA70DB883B | 5962-01-348-1040 | Microcircuit, Memory | Output Logic Form: Complementary-metal oxide-semiconductor logic Memory Device Type: RAM | Integrated Device Technology Inc. (61772) | |
IDT6168LA-70DBRT IDT6168LA70DBRT | 5962-01-351-5740 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Static operation and hermetically sealed and bidirectional | Integrated Device Technology Inc. (61772) |