Electronic Microcircuits: GAL20XV10B-20LP, GAL22V10B-10LP, GAL22V10B-7LP
| MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
|---|---|---|---|---|---|
| GAL20XV10B-20LP GAL20XV10B20LP | 5962-01-413-6603 | Microcircuit, Digital | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Inclosure Material: Plastic | Lattice Semiconductor Corp. (66675) | |
| GAL22V10-10LJ GAL22V1010LJ | 5962-01-381-8204 | Microcircuit, Memory | Features Provided: Programmed Output Logic Form: Complementary-metal oxide-semiconductor logic III End Item Identification: Lantirn/hu | Gamma Enterprises (68040) | |
| GAL22V10-15LP GAL22V1015LP | 5962-01-342-9813 | Microcircuit, Digital | Storage Temp Range: -65.0/+125.0 deg celsius Output Logic Form: Transistor-transistor logic Time Rating per Chacteristic: 15.00 nanoseconds maximum propagation delay | Lattice Semiconductor Corp. (66675) | |
| GAL22V10-15QP GAL22V1015QP | 5962-01-585-4245 | Microcircuit, Digital | Lattice Semiconductor Corp. (66675) | ||
| GAL22V10-20LD/883C GAL22V1020LD883C | 5962-01-383-7019 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and monolithic and programmed | Lattice Semiconductor Corp. (66675) | |
| GAL22V10-25LNC GAL22V1025LNC | 5962-01-390-6604 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 75.0 deg celsius Features Provided: Programmed | National Semiconductor Corporation (27014) | |
| GAL22V10-25LNC GAL22V1025LNC | 5962-01-390-8333 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 75.0 deg celsius Features Provided: Programmed and monolithic and high performance | National Semiconductor Corporation (27014) | |
| GAL22V10-25LNC GAL22V1025LNC | 5962-01-397-2750 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Features Provided: Programmable Terminal Type and Quantity: 24 printed circuit | National Semiconductor Corporation (27014) | |
| GAL22V10-25LP GAL22V1025LP | 5962-01-382-3312 | Microcircuit, Memory | Lattice Semiconductor Corp. (66675) | ||
| GAL22V10-25LP GAL22V1025LP | 5962-01-385-4477 | Microcircuit, Memory | Lattice Semiconductor Corp. (66675) | ||
| GAL22V10-25LP GAL22V1025LP | 5962-01-385-4552 | Microcircuit, Memory | Lattice Semiconductor Corp. (66675) | ||
| GAL22V10-5 GAL22V105 | 5962-01-440-8751 | Microcircuit, Memory | Features Provided: Programmed III End Item Identification: 6625013241523 Memory Device Type: PAL | Triquint Semiconductor Inc. (1FA49) | |
| GAL22V10-55C GAL22V1055C | 5962-01-440-8868 | Microcircuit, Memory | Features Provided: Programmed III End Item Identification: 6625013241523 Memory Device Type: PAL | Triquint Semiconductor Inc. (0JP55) | |
| GAL22V10B-10LJ GAL22V10B10LJ | 5962-01-380-7803 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Terminal Type and Quantity: 24 printed circuit Memory Device Type: Programmed | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-10LJ GAL22V10B10LJ | 5962-01-381-8312 | Microcircuit, Memory | Features Provided: Programmed III End Item Identification: Lantirn/hu | Gamma Enterprises (68040) | |
| GAL22V10B-10LJ GAL22V10B10LJ | 5962-01-392-9156 | Microcircuit set | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Design Function and Quantity: 1 memory, programmed array logic | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-10LJ GAL22V10B10LJ | 5962-01-392-9164 | Microcircuit set | Features Provided: Programmed III End Item Identification: Hu ;lantirn | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-10LJ GAL22V10B10LJ | 5962-01-465-1148 | Microcircuit, Digital | Inclosure Configuration: Leaded chip carrier Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Asynchronous and electrostatic sensitive and low power and W/clock and synchronous and erasable and high speed | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-10LP GAL22V10B10LP | 5962-01-400-2427 | Microcircuit, Memory | Features Provided: Asynchronous and high speed and 3-STATE output Output Logic Form: Complementary-metal oxide-semiconductor logic Input Circuit Pattern: 22 input | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-10LP GAL22V10B10LP | 5962-01-458-2816 | Microcircuit, Memory | Lattice Semiconductor Corp. (66675) | ||
| GAL22V10B-10LP GAL22V10B10LP | 5962-01-458-2836 | Microcircuit, Memory | Lattice Semiconductor Corp. (66675) | ||
| GAL22V10B-15LD/883 GAL22V10B15LD883 | 5962-01-391-0271 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and programmable | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-15LD/883C GAL22V10B15LD883C | 5962-01-418-8057 | Microcircuit, Digital | Operating Temp Range: -55.0 to 125.0 deg celsius | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-15LJI GAL22V10B15LJI | 5962-01-444-0878 | Microcircuit, Digital | Inclosure Configuration: Leaded chip carrier Operating Temp Range: -40.0 to 85.0 deg celsius Inclosure Material: Plastic | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-15LJI GAL22V10B15LJI | 5962-01-449-8845 | Microcircuit, Memory | Inclosure Configuration: Leaded chip carrier Features Provided: Programmed Terminal Type and Quantity: 28 printed circuit | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B15LJI | 5962-01-449-8819 | Microcircuit, Memory | Features Provided: Programmed III End Item Identification: Acts nellis(tre) Memory Device Type: PAL | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-15LP GAL22V10B15LP | 5962-01-398-3162 | Microcircuit, Digital | Inclosure Configuration: Dual-in-line Output Logic Form: Complementary-metal oxide-semiconductor logic Part Name Assigned By Controlling Agency: Electrically-erasable plds | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-15QP GAL22V10B15QP | 5962-01-457-9500 | Microcircuit, Digital | Inclosure Configuration: Dual-in-line Inclosure Material: Plastic Terminal Type and Quantity: 24 pin | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-20LD/883 GAL22V10B20LD883 | 5962-01-383-7019 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and monolithic and programmed | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-30LD/883 GAL22V10B30LD883 | 5962-01-391-0274 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and programmable | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-7LP GAL22V10B7LP | 5962-01-382-4982 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Features Provided: Programmed Body Length: 1.125 inches minimum and 1.270 inches maximum | Lattice Semiconductor Corp. (66675) | |
| GAL22V10B-7LP GAL22V10B7LP | 5962-01-400-2422 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 75.0 deg celsius Features Provided: Programmable | Lattice Semiconductor Corp. (66675) |