Electronic Microcircuits: G452137-24, G452975-2, G452981
| MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
|---|---|---|---|---|---|
| G452137-24 G45213724 | 5962-01-330-6523 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Bipolar and burn in and monolithic and programmed and schottky and 3-STATE output | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452137-25 G45213725 | 5962-01-331-4111 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Bipolar and schottky and programmable and monolithic and 3-STATE output and high impedance | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452137-3 G4521373 | 5962-01-359-2061 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Bipolar and programmed and schottky and W/enable | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452137-4 G4521374 | 5962-01-331-7102 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and bipolar and monolithic and programmed | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452137-5 G4521375 | 5962-01-331-7103 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and bipolar and monolithic and programmed | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452137-6 G4521376 | 5962-01-331-4111 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Bipolar and schottky and programmable and monolithic and 3-STATE output and high impedance | Raytheon Company (49956) | |
| G452137-7 G4521377 | 5962-01-331-4112 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Bipolar and schottky and programmable and monolithic and 3-STATE output and high impedance | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452137-8 G4521378 | 5962-01-331-3968 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Bipolar and schottky and programmable and monolithic and 3-STATE output and high impedance | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452137-9 G4521379 | 5962-01-331-7104 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and bipolar and monolithic and programmed | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452975 | 5962-01-357-1375 | Microcircuit, Memory | III End Item Identification: AN/FPS/126 Special Features: ESD Criticality Code Justification: FEAT | Raytheon Company (49956) | |
| G452975-1 G4529751 | 5962-01-328-8744 | Microcircuit, Digital | Features Provided: Burn in and electrostatic sensitive Design Function and Quantity: 1 array, logic III End Item Identification: AN/FPS/120 | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452975-2 G4529752 | 5962-01-357-1375 | Microcircuit, Memory | III End Item Identification: AN/FPS/126 Special Features: ESD Criticality Code Justification: FEAT | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452976-1 G4529761 | 5962-01-328-8724 | Microcircuit, Digital | Features Provided: Burn in and electrostatic sensitive Design Function and Quantity: 1 array, logic III End Item Identification: AN/FPS/120 | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452976-2 G4529762 | 5962-01-352-8595 | Microcircuit, Memory | III End Item Identification: AN/FPS/126 Special Features: ESD Criticality Code Justification: FEAT | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452977-1 G4529771 | 5962-01-331-4901 | Microcircuit, Digital | Inclosure Configuration: Dual-in-line Features Provided: Burn in and electrostatic sensitive Design Function and Quantity: 1 array, logic | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452978-1 G4529781 | 5962-01-328-8747 | Microcircuit, Digital | Features Provided: Burn in and electrostatic sensitive Design Function and Quantity: 1 array, logic III End Item Identification: AN/FPS/120 | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452979-1 G4529791 | 5962-01-328-8748 | Microcircuit, Digital | Features Provided: Burn in and electrostatic sensitive Design Function and Quantity: 1 array, logic III End Item Identification: AN/FPS/120 | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452980 | 5962-01-355-9138 | Microcircuit, Memory | III End Item Identification: AN/FPS/126 Special Features: ESD Criticality Code Justification: FEAT | Raytheon Company (49956) | |
| G452980-2 G4529802 | 5962-01-355-9138 | Microcircuit, Memory | III End Item Identification: AN/FPS/126 Special Features: ESD Criticality Code Justification: FEAT | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G452981 | 5962-01-357-1990 | Microcircuit, Memory | III End Item Identification: Milstar Special Features: Radiation hardned iaw ESD-85-TE-1390B;ESD;HCI;SH Criticality Code Justification: FEAT | Raytheon Company (49956) |