Electronic Microcircuits: G435639-79, G435639-84, G4359
| MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
|---|---|---|---|---|---|
| G435639-79 G43563979 | 5962-01-418-3880 | Microcircuit, Memory | Features Provided: Programmed III End Item Identification: CP-1870(V)2/U, AN/USC-38; CV-4056(V)3/USC-38(V) ECP038 Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435639-8 G4356398 | 5962-01-351-7272 | Microcircuit, Memory | Features Provided: Burn in and programmed III End Item Identification: Satellite communications terminal AN/USC-38(V)1 Memory Device Type: PROM | Raytheon Company (49956) | |
| G435639-80 G43563980 | 5962-01-418-3874 | Microcircuit, Memory | Features Provided: Programmed III End Item Identification: CP-1870(V)2/U, AN/USC-38; CV-4056(V)3/USC-38(V) ECP038 Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435639-81 G43563981 | 5962-01-426-7233 | Microcircuit, Memory | III End Item Identification: CP-1870(V)2/U - AN/USC-38 Special Features: Programmed 5962-8953701YA (CY7C251-65WMB) | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435639-82 G43563982 | 5962-01-426-7228 | Microcircuit, Memory | III End Item Identification: CP-1870(V)2/U - AN/USC-38 Special Features: Programmed 5962-8953701YA (CY7C251-65WMB) | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435639-83 G43563983 | 5962-01-426-7229 | Microcircuit, Memory | III End Item Identification: CP-1870(V)2/U - AN/USC-38 Special Features: Programmed 5962-8953701YA (CY7C251-65WMB) | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435639-84 G43563984 | 5962-01-426-7230 | Microcircuit, Memory | III End Item Identification: CP-1870(V)2/U - AN/USC-38 Special Features: Programmed 5962-8953701YA (CY7C251-65WMB) | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435639-9 G4356399 | 5962-01-351-7267 | Microcircuit, Memory | Features Provided: Burn in and programmed III End Item Identification: Satellite communications terminal AN/USC-38(V)1 Memory Device Type: PROM | Raytheon Company (49956) | |
| G435670-1 G4356701 | 5962-01-351-6234 | Microcircuit, Memory | Features Provided: Burn in and programmed III End Item Identification: Satellite communications terminal AN/USC-38(V)1 Memory Device Type: PROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435671-1 G4356711 | 5962-01-351-6235 | Microcircuit, Memory | Features Provided: Burn in and programmed III End Item Identification: Satellite communications terminal AN/USC-38(V)1 Memory Device Type: PROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435672-1 G4356721 | 5962-01-351-6236 | Microcircuit, Memory | Features Provided: Burn in and programmed III End Item Identification: Satellite communications terminal AN/USC-38(V)1 Memory Device Type: PROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435790-2 G4357902 | 5962-01-351-4990 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed and monolithic and W/clock and bidirectional | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435799-3 G4357993 | 5962-01-351-4961 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Bipolar and schottky and programmed and W/active pull-up and high impedance and 3-STATE output | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435800-12 G43580012 | 5962-01-351-4960 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Bipolar and schottky and programmed and ultraviolet erasable and high impedance and 3-STATE output | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435801-17 G43580117 | 5962-01-351-6237 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and electrostatic sensitive and programmed | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435885-1 G4358851 | 5962-01-352-0998 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and monolithic and programmed | Raytheon Company (49956) | |
| G435885-2 G4358852 | 5962-01-352-0998 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and monolithic and programmed | Raytheon Company (49956) | |
| G435885-3 G4358853 | 5962-01-352-0998 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and monolithic and programmed | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G435885-4 G4358854 | 5962-01-352-0998 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and monolithic and programmed | Raytheon Company (49956) | |
| G4359 | 5962-00-506-6492 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Inclosure Material: Ceramic and glass | Intersil Corporation (34371) |