Electronic Microcircuits: G104642-822, G104674-821, G104678-853
| MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
|---|---|---|---|---|---|
| G104642-822 G104642822 | 5962-01-314-5375 | Microcircuit, Digital | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | ||
| G104644-821 G104644821 | 5962-01-314-5376 | Microcircuit, Digital | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | ||
| G104646-821 G104646821 | 5962-01-314-9192 | Microcircuit, Digital | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic | Austin Semiconductor Inc. (0EU86) Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104650-852 G104650852 | 5962-01-315-1495 | Microcircuit, Linear | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic | Massachusetts Components Inc. (66294) Raytheon Company (49956) Raytheon Technical Services Company (3B150) Satcon Electronics Inc. (34707) Sertech Laboratories Inc. (58420) Stellar Microelectronics Inc. (55009) | |
| G104652-822 G104652822 | 5962-01-263-0996 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and monolithic and bipolar and programmable | Raytheon Company (49956) | |
| G104652-822 G104652822 | 5962-01-414-1084 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | DLA Land and Maritime (67268) | |
| G104652-822 G104652822 | 5962-01-414-1085 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | DLA Land and Maritime (67268) | |
| G104652-822 G104652822 | 5962-01-414-1088 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | DLA Land and Maritime (67268) | |
| G104652-822 G104652822 | 5962-01-414-1091 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | DLA Land and Maritime (67268) | |
| G104652-822 G104652822 | 5962-01-414-1095 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | DLA Land and Maritime (67268) | |
| G104652-822 G104652822 | 5962-01-414-1096 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | DLA Land and Maritime (67268) | |
| G104653-822 G104653822 | 5962-01-263-0989 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and bipolar and monolithic and programmed | Raytheon Company (49956) | |
| G104654-822 G104654822 | 5962-01-262-9879 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and monolithic and bipolar and programmed | Raytheon Company (49956) | |
| G104662-822 G104662822 | 5962-01-265-8166 | Microcircuit, Digital | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and schottky and monolithic and 3-STATE output | Raytheon Company (49956) | |
| G104663-822 G104663822 | 5962-01-262-7123 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic and bipolar | Raytheon Company (49956) | |
| G104663-852 G104663852 | 5962-01-314-9734 | Microcircuit, Digital | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Electrostatic sensitive and low power and monolithic and schottky | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104665-822 G104665822 | 5962-01-314-5377 | Microcircuit, Digital | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | ||
| G104667-841 G104667841 | 5962-01-315-1496 | Microcircuit, Linear | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and hermetically sealed and high speed and W/enable and monolithic and electrostatic sensitive | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104667-852 G104667852 | 5962-01-413-4896 | Microcircuit, Linear | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0/+125.0 deg celsius Features Provided: Electrostatic sensitive and high speed and monolithic | Raytheon Company (49956) | |
| G104668-852 G104668852 | 5962-01-314-5378 | Microcircuit, Digital | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0/+125.0 deg celsius Features Provided: Electrostatic sensitive and burn in | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-257-8346 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Electrostatic sensitive and 3-STATE output and programmable | Raytheon Company (49956) | |
| G104670-834 G104670834 | 5962-01-413-9965 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9966 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9967 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9971 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9973 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9974 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9976 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9977 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9979 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9980 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9986 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9989 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9991 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9992 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9994 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9995 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9996 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9997 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9998 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-413-9999 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-414-0000 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-414-0001 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-414-0002 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-414-0003 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-414-0004 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-414-0005 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-414-0006 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104670-834 G104670834 | 5962-01-414-0010 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104674-821 G104674821 | 5962-01-314-5379 | Microcircuit, Digital | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | ||
| G104677-103 G104677103 | 5962-01-314-9194 | Microcircuit, Digital | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic | Raytheon Company (49956) | |
| G104677-822 G104677822 | 5962-01-314-9194 | Microcircuit, Digital | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic | Austin Semiconductor Inc. (0EU86) Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104677-852 G104677852 | 5962-01-314-9195 | Microcircuit, Digital | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic | Austin Semiconductor Inc. (0EU86) Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104678-853 G104678853 | 5962-01-315-1507 | Microcircuit, Digital | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and electrostatic sensitive and bipolar and programmable and 3-STATE output | Raytheon Company (49956) | |
| G104678-853 G104678853 | 5962-01-413-9981 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104678-853 G104678853 | 5962-01-413-9982 | Microcircuit, Memory | Features Provided: Programmed Memory Device Type: ROM | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104678-853 G104678853 | 5962-01-414-1094 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | DLA Land and Maritime (67268) | |
| G104678-853 G104678853 | 5962-01-414-1103 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | DLA Land and Maritime (67268) | |
| G104678-853 G104678853 | 5962-01-414-1106 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | DLA Land and Maritime (67268) | |
| G104678-853 G104678853 | 5962-01-414-1107 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | DLA Land and Maritime (67268) | |
| G104678-853 G104678853 | 5962-01-414-1109 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | DLA Land and Maritime (67268) | |
| G104678-853 G104678853 | 5962-01-414-1114 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | DLA Land and Maritime (67268) | |
| G104678-853 G104678853 | 5962-01-417-5605 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Terminal Type and Quantity: 28 leadless | Raytheon Company (49956) Raytheon Technical Services Company (3B150) | |
| G104678-853 G104678853 | 5962-01-444-5895 | Microcircuit, Memory | Raytheon Company (49956) Raytheon Technical Services Company (3B150) |