Electronic Microcircuits: CY7C263-35DMB, CY7C269-60WMB, CY7C271-45WMB
| MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
|---|---|---|---|---|---|
| CY7C263-35DMB CY7C26335DMB | 5962-01-418-8811 | Microcircuit, Memory | Operating Temp Range: -55.0 to 125.0 deg celsius Inclosure Material: Ceramic | Cypress Semiconductor Corporation (65786) | |
| CY7C263-35WMB CY7C26335WMB | 5962-01-414-9649 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Ultraviolet erasable and 3-STATE output | 2 MB Distribution (FAH01) Cypress Semiconductor Corporation (65786) | |
| CY7C263-40WC CY7C26340WC | 5962-01-354-1905 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Inclosure Material: Ceramic | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45DMB CY7C26345DMB | 5962-01-322-0178 | Microcircuit, Memory | End Item Identification: ASDE3 Part Name Assigned BY Controlling Agency: Microckt, blank, spec | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45DMB CY7C26345DMB | 5962-01-361-6503 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and programmed | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45DMB CY7C26345DMB | 5962-01-361-6504 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and programmed | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45DMB CY7C26345DMB | 5962-01-361-6505 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and electrostatic sensitive and programmed | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45DMB CY7C26345DMB | 5962-01-362-1136 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and monolithic and programmed | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45DMB CY7C26345DMB | 5962-01-362-1137 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and monolithic and programmed | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45DMB CY7C26345DMB | 5962-01-362-1138 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and burn in and monolithic and programmed | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45DMB CY7C26345DMB | 5962-01-362-8123 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and electrostatic sensitive and programmed | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45DMB CY7C26345DMB | 5962-01-375-2537 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: 3-STATE output and high speed and low power and W/disable and high performance and ultraviolet erasable and high impedance | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45DMB CY7C26345DMB | 5962-01-375-2538 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: 3-STATE output and high speed and low power and W/disable and high performance and ultraviolet erasable and high impedance | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45DMB CY7C26345DMB | 5962-01-375-2539 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: 3-STATE output and high speed and low power and W/disable and high performance and ultraviolet erasable and high impedance | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45DMB CY7C26345DMB | 5962-01-375-2540 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: 3-STATE output and high speed and low power and W/disable and high performance and ultraviolet erasable and high impedance | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45WC CY7C26345WC | 5962-01-354-1899 | Microcircuit, Memory | Body Length: 1.230 inches minimum and 1.280 inches maximum Body Width: 0.245 inches minimum and 0.310 inches maximum Body Height: 0.140 inches minimum and 0.170 inches maximum | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45WCB CY7C26345WCB | 5962-01-343-5543 | Microcircuit, Digital | Design Function and Quantity: 1 switch Output Logic Form: Complementary-metal oxide-semiconductor logic | Cypress Semiconductor Corporation (65786) | |
| CY7C263-45WMB CY7C26345WMB | 5962-01-375-3075 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Terminal Type and Quantity: 24 pin | Cypress Semiconductor Corporation (65786) | |
| CY7C263-55DMB CY7C26355DMB | 5962-01-412-6863 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Inclosure Material: Ceramic | Cypress Semiconductor Corporation (65786) | |
| CY7C263-55WMB CY7C26355WMB | 5962-01-481-5079 | Microcircuit, Memory | Inclosure Configuration: Flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Terminal Type and Quantity: 24 pin | Cypress Semiconductor Corporation (65786) | |
| CY7C264-45DMB CY7C26445DMB | 5962-01-408-8613 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Terminal Type and Quantity: 24 printed circuit (Non-Core Data) bit Quantity: 65536 | Cypress Semiconductor Corporation (65786) | |
| CY7C264-45WMB CY7C26445WMB | 5962-01-375-4456 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in, MIL-STD-883, class b and electrostatic sensitive and monolithic and hermetically sealed and ultraviolet erasable and high speed and erasable and programmable and tested to MIL-STD-883 | Cypress Semiconductor Corporation (65786) | |
| CY7C265-15WC CY7C26515WC | 5962-01-533-9366 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Inclosure Material: Ceramic | Cypress Semiconductor Corporation (65786) | |
| CY7C265-40PC CY7C26540PC | 5962-01-369-4314 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Terminal Type and Quantity: 28 pin | Cypress Semiconductor Corporation (65786) | |
| CY7C265-50DMB CY7C26550DMB | 5962-01-398-1706 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Terminal Type and Quantity: 28 pin | Cypress Semiconductor Corporation (65786) | |
| CY7C265-50LMB CY7C26550LMB | 5962-01-418-4485 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Inclosure Material: Ceramic | Cypress Semiconductor Corporation (65786) | |
| CY7C265-50LMB CY7C26550LMB | 5962-01-418-4486 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Inclosure Material: Ceramic | Cypress Semiconductor Corporation (65786) | |
| CY7C265-50LMB CY7C26550LMB | 5962-01-418-4487 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Inclosure Material: Ceramic | Cypress Semiconductor Corporation (65786) | |
| CY7C265-50LMB CY7C26550LMB | 5962-01-418-4488 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Inclosure Material: Ceramic | Cypress Semiconductor Corporation (65786) | |
| CY7C265-50LMB CY7C26550LMB | 5962-01-418-4489 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Inclosure Material: Ceramic | Cypress Semiconductor Corporation (65786) | |
| CY7C265-50LMB CY7C26550LMB | 5962-01-418-4490 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0 to 125.0 deg celsius Inclosure Material: Ceramic | Cypress Semiconductor Corporation (65786) | |
| CY7C265-50LMB CY7C26550LMB | 5962-01-418-4492 | Microcircuit, Memory | Inclosure Configuration: Leadless flat pack Operating Temp Range: -55.0/+125.0 deg celsius Inclosure Material: Ceramic | Cypress Semiconductor Corporation (65786) | |
| CY7C269-50DMB CY7C26950DMB | 5962-01-423-3922 | Microcircuit, Memory | Cypress Semiconductor Corporation (65786) | ||
| CY7C269-60WMB CY7C26960WMB | 5962-01-334-2161 | Microcircuit, Digital | Operating Temp Range: -55.0 to 125.0 deg celsius Design Function and Quantity: 1 array, logic Output Logic Form: Complementary-metal oxide-semiconductor logic | Cypress Semiconductor Corporation (65786) | |
| CY7C271-45PC CY7C27145PC | 5962-01-369-4312 | Microcircuit, Memory | Operating Temp Range: +0.0/+70.0 deg celsius Inclosure Configuration: Dual-in-line Unable to Decode: Unable to decode | Cypress Semiconductor Corporation (65786) | |
| CY7C271-45WC CY7C27145WC | 5962-01-422-8910 | Microcircuit, Memory | Operating Temp Range: +0.0/+70.0 deg celsius Inclosure Configuration: Dual-in-line Output Logic Form: Complementary-metal oxide-semiconductor logic | Cypress Semiconductor Corporation (65786) | |
| CY7C271-45WMB CY7C27145WMB | 5962-01-382-4240 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Ultraviolet erasable and W/enable and W/disable and high impedance | Cypress Semiconductor Corporation (65786) | |
| CY7C271-45WMB CY7C27145WMB | 5962-01-423-7904 | Microcircuit, Memory | Features Provided: Electrostatic sensitive III End Item Identification: RYY (Non-Core Data) bit Quantity: 232 | Cypress Semiconductor Corporation (65786) |