Electronic Microcircuits: 524348-2, 52460-2, 52465-2
| MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
|---|---|---|---|---|---|
| 524348-2 5243482 | 5962-01-424-3333 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmed | Telephonics Corporation (64694) | |
| 5244-154 5244154 | 5962-01-180-5647 | Microcircuit, Digital | Raytheon Company (05869) | ||
| 524439 | 5962-01-174-8666 | Microcircuit, Memory | Output Logic Form: N-type metal oxide-semiconductor logic (Non-Core Data) bit Quantity: 65536 Memory Device Type: ROM | Fluke Corporation (89536) | |
| 524462 | 5962-01-174-8667 | Microcircuit, Memory | Output Logic Form: N-type metal oxide-semiconductor logic (Non-Core Data) bit Quantity: 65536 Memory Device Type: ROM | Fluke Corporation (89536) | |
| 524470 | 5962-01-174-8668 | Microcircuit, Memory | Output Logic Form: N-type metal oxide-semiconductor logic (Non-Core Data) bit Quantity: 65536 Memory Device Type: ROM | Fluke Corporation (89536) | |
| 524496 | 5962-01-175-1634 | Microcircuit, Digital | Design Function and Quantity: 1 microcomputer Output Logic Form: N-type metal oxide-semiconductor logic (Non-Core Data) bit Quantity: 8 | Fluke Corporation (89536) | |
| 52452-2 524522 | 5962-01-371-4792 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Features Provided: Burn in and electrostatic sensitive and monolithic and programmed | Raytheon Company (05869) | |
| 52453-2 524532 | 5962-01-371-3190 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Features Provided: Hermetically sealed and ultraviolet erasable and electrostatic sensitive and programmed and W/enable and W/disable and W/inhibit and monolithic | Raytheon Company (05869) | |
| 52454-2 524542 | 5962-01-371-4160 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Features Provided: Hermetically sealed and ultraviolet erasable and electrostatic sensitive and programmed and W/enable and W/disable and W/inhibit and monolithic | Raytheon Company (05869) | |
| 52455-2 524552 | 5962-01-371-4793 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Features Provided: Burn in and electrostatic sensitive and monolithic and programmed | Raytheon Company (05869) | |
| 52456-2 524562 | 5962-01-371-4161 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Features Provided: Hermetically sealed and ultraviolet erasable and electrostatic sensitive and programmed and W/enable and W/disable and W/inhibit and monolithic | Raytheon Company (05869) | |
| 52457-2 524572 | 5962-01-371-3191 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Features Provided: Hermetically sealed and ultraviolet erasable and electrostatic sensitive and programmed and W/enable and W/disable and W/inhibit and monolithic | Raytheon Company (05869) | |
| 52458-2 524582 | 5962-01-371-5408 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -10.0 to 80.0 deg celsius Features Provided: Hermetically sealed and ultraviolet erasable and electrostatic sensitive and programmed and W/enable and W/disable and W/inhibit and monolithic | Raytheon Company (05869) | |
| 52459-2 524592 | 5962-01-371-5409 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Features Provided: Hermetically sealed and ultraviolet erasable and electrostatic sensitive and programmed and W/enable and W/disable and W/inhibit and monolithic | Raytheon Company (05869) | |
| 52460-2 524602 | 5962-01-371-4794 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Features Provided: Burn in and electrostatic sensitive and monolithic and programmed | Raytheon Company (05869) | |
| 52461-2 524612 | 5962-01-370-8426 | Microcircuit, Memory | Features Provided: Burn in and electrostatic sensitive and programmed Voltage Rating and Type per Characteristic: 7.0 volts maximum power source (Non-Core Data) bit Quantity: 131072 | Raytheon Company (05869) | |
| 52462-2 524622 | 5962-01-370-8427 | Microcircuit, Memory | Features Provided: Burn in and electrostatic sensitive and programmed Voltage Rating and Type per Characteristic: 7.0 volts maximum power source (Non-Core Data) bit Quantity: 131072 | Raytheon Company (05869) | |
| 52463-2 524632 | 5962-01-370-9910 | Microcircuit, Memory | Features Provided: Burn in and electrostatic sensitive Voltage Rating and Type per Characteristic: 7.0 volts maximum power source (Non-Core Data) bit Quantity: 131072 | Raytheon Company (05869) | |
| 52464-2 524642 | 5962-01-371-4159 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Features Provided: Hermetically sealed and ultraviolet erasable and electrostatic sensitive and programmed and W/enable and W/disable and W/inhibit and monolithic | Raytheon Company (05869) | |
| 52465-2 524652 | 5962-01-370-8085 | Microcircuit, Memory | Features Provided: Burn in and electrostatic sensitive and programmed Voltage Rating and Type per Characteristic: 7.0 volts maximum power source (Non-Core Data) bit Quantity: 131072 | Raytheon Company (05869) |