Electronic Microcircuits: 3260AS492, 3260AS496-1, 3261049-4
| MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
|---|---|---|---|---|---|
| 3260AS492 | 5962-01-485-6669 | Microcircuit, Memory | III End Item Identification: Next higher assembly 3260AS120-1; used on A/E37T-35 Memory Device Type: PAL Special Features: Altered item from cypress PALC22V10-25WI; programming procedures shall be in accordance to drawing 3260AS492; marking of programmed device shall be in accorance to drawing 3260AS492; section ii, 2.0 procedures | Naval Air Systems Command (30003) | |
| 3260AS492-1 3260AS4921 | 5962-01-463-5713 | Microcircuit, Memory | III End Item Identification: Used on test set, common rack and launcher A/E37T-35 nsn 4920-01-424-6101 Memory Device Type: Eprom Part Name Assigned By Controlling Agency: Eprom pal smwat | Naval Air Systems Command (30003) | |
| 3260AS493 | 5962-01-485-6648 | Microcircuit, Memory | III End Item Identification: Next higher assembly 3260AS120-1; used on A/E37T-35 Memory Device Type: PAL Special Features: Altered item from cypress PALC22V10-25WI; programming procedures shall be in accordance to drawing 3260AS493; marking of programmed device shall be in accordance to drawing 3260AS493, section ii, 2.0 procedures | Naval Air Systems Command (30003) | |
| 3260AS493-1 3260AS4931 | 5962-01-463-5714 | Microcircuit, Memory | III End Item Identification: Used on test set, common rack and launcher A/E37T-35 nsn 4920-01-424-6101 Memory Device Type: Eprom Part Name Assigned By Controlling Agency: Eprom pal select | Naval Air Systems Command (30003) | |
| 3260AS495 | 5962-01-485-6710 | Microcircuit, Memory | III End Item Identification: Next higher assembly 3260AS130-1; used on A/E37T-35 Memory Device Type: PAL Special Features: Alter from cypress PALC22V10-25CI; programming procedures shall be in accorance to drawing 3260AS495, sectioni; marking of programmed device shall be in accordance to drawing 3260AS495, section ii, 2.0 procedures | Naval Air Systems Command (30003) | |
| 3260AS495-1 3260AS4951 | 5962-01-463-5715 | Microcircuit, Memory | III End Item Identification: Used on test set, common rack and launcher A/E37T-35 nsn 4920-01-424-6101 Memory Device Type: Eprom Part Name Assigned By Controlling Agency: Eprom pal analog | Naval Air Systems Command (30003) | |
| 3260AS496 | 5962-01-485-6690 | Microcircuit, Memory | III End Item Identification: Next higher assembly 3260AS130-1; used on A/E37T-35 Memory Device Type: PAL Special Features: Alter from cypress PALC22V10-25WI; programming procedures shall be in accordance to drawing 3260AS496; marking of programmed device shall be in accordance to drawing 3260AS496; section ii, 2.0 procedures | Naval Air Systems Command (30003) | |
| 3260AS496-1 3260AS4961 | 5962-01-463-5719 | Microcircuit, Memory | III End Item Identification: Used on test set, common rack and launcher A/E37T-35 nsn 4920-01-424-6101 Memory Device Type: Eprom Part Name Assigned By Controlling Agency: Eprom pal deco | Naval Air Systems Command (30003) | |
| 3261028-1 32610281 | 5962-01-240-4395 | Microcircuit, Digital | Features Provided: Programmed Design Function and Quantity: 1 gate, array (Non-Core Data) bit Quantity: 65536 | Electrodynamics Inc. (10236) | |
| 3261031-1 32610311 | 5962-01-264-2954 | Microcircuit, Memory | Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and programmed Storage Temp Range: -65.0 to 150.0 deg celsius | Electrodynamics Inc. (10236) | |
| 3261031-2 32610312 | 5962-01-264-2954 | Microcircuit, Memory | Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Burn in and programmed Storage Temp Range: -65.0 to 150.0 deg celsius | Electrodynamics Inc. (10236) | |
| 3261032-2 32610322 | 5962-01-303-6130 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic and bipolar and programmable | Electrodynamics Inc. (10236) | |
| 3261033-2 32610332 | 5962-01-304-5989 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic and bipolar and programmable | Electrodynamics Inc. (10236) | |
| 3261034-1 32610341 | 5962-01-303-6877 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic and bipolar and programmable | Electrodynamics Inc. (10236) | |
| 3261035-1 32610351 | 5962-01-264-2953 | Microcircuit, Digital | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic | Electrodynamics Inc. (10236) | |
| 3261035-2 32610352 | 5962-01-264-2953 | Microcircuit, Digital | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Monolithic | Electrodynamics Inc. (10236) | |
| 3261037-1 32610371 | 5962-01-240-4392 | Microcircuit, Digital | Features Provided: Programmed Design Function and Quantity: 1 decoder | Electrodynamics Inc. (10236) | |
| 3261048-1 32610481 | 5962-01-282-3935 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Features Provided: Monolithic and programmable and erasable | Electrodynamics Inc. (10236) | |
| 3261049-1 32610491 | 5962-01-282-3934 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Features Provided: Monolithic and programmable and erasable | Electrodynamics Inc. (10236) | |
| 3261049-4 32610494 | 5962-01-282-3934 | Microcircuit, Memory | Inclosure Configuration: Dual-in-line Operating Temp Range: 0.0 to 70.0 deg celsius Features Provided: Monolithic and programmable and erasable | Electrodynamics Inc. (10236) |