Electronic Microcircuits: 11475905, 11476086-012, 11477673-1
| MFG SKU | NSN | Item Name | Details | Manufacturer (CAGE) | RFQ |
|---|---|---|---|---|---|
| 11475905 | 5962-01-464-6241 | Microcircuit, Digital | Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Electrostatic sensitive and burn in Storage Temp Range: -65.0 to 150.0 deg celsius | U S Army Aviation and Missile (18876) | |
| 11476078-002 11476078002 | 5962-01-465-8825 | Microcircuit, Digital | Features Provided: Programmable and erasable Design Function and Quantity: 1 array, logic Output Logic Form: Complementary-metal oxide-semiconductor logic | U S Army Aviation and Missile (18876) | |
| 11476078-003 11476078003 | 5962-01-465-8824 | Microcircuit, Digital | Features Provided: Programmable and erasable Design Function and Quantity: 1 array, logic Output Logic Form: Complementary-metal oxide-semiconductor logic | U S Army Aviation and Missile (18876) | |
| 11476078-004 11476078004 | 5962-01-465-8826 | Microcircuit, Digital | Features Provided: Programmable and erasable Design Function and Quantity: 1 array, logic Output Logic Form: Complementary-metal oxide-semiconductor logic | U S Army Aviation and Missile (18876) | |
| 11476078-011 11476078011 | 5962-01-517-8355 | Microcircuit, Digital | III End Item Identification: Patriot Special Features: Make from smd P/N 5962-8984106LX;REFER to programming document PR11476078-011 Part Name Assigned By Controlling Agency: Cmos electrically erasable programmable array logic | U S Army Aviation and Missile (18876) | |
| 11476086-012 11476086012 | 5962-01-517-8356 | Microcircuit, Digital | III End Item Identification: Patriot Special Features: Make from smd P/N 5962-9324 or G749226 unless otherwise specified; refer to programming document PR11476086-012 Part Name Assigned By Controlling Agency: Cmos eeprom erasable programmablelogic device | U S Army Aviation and Missile (18876) | |
| 11476086-020 11476086020 | 5962-01-485-3709 | Microcircuit, Memory | Inclosure Configuration: Pin grid array Features Provided: Programmable and electrostatic sensitive Output Logic Form: Complementary-metal oxide-semiconductor logic | U S Army Aviation and Missile (18876) | |
| 11476086-051 11476086051 | 5962-01-517-8358 | Microcircuit, Digital | III End Item Identification: Patriot Special Features: Make from smd P/N 5962-9324 or G749226 unless otherwise specified; refer to programming document PR11476086-051 Part Name Assigned By Controlling Agency: Cmos eeprom erasable programmablelogic device | U S Army Aviation and Missile (18876) | |
| 11476086-055 11476086055 | 5962-01-513-3198 | Microcircuit, Digital | Inclosure Configuration: Pin grid array Features Provided: Programmable Output Logic Form: Complementary-metal oxide-semiconductor logic | U S Army Aviation and Missile (18876) | |
| 11476087-007 11476087007 | 5962-01-517-8359 | Microcircuit, Digital | III End Item Identification: Patriot Part Name Assigned By Controlling Agency: Cmos eeprom erasable programmablelogic device | U S Army Aviation and Missile (18876) | |
| 11476095 | 5962-01-464-6255 | Microcircuit, Hybrid | Inclosure Configuration: Dual-in-line Operating Temp Range: -45.6 to 85.0 deg celsius Features Provided: Electrostatic sensitive and burn in | U S Army Aviation and Missile (18876) | |
| 11476104 | 5962-01-529-4420 | Microcircuit, Digital | Inclosure Configuration: Pin grid array Design Function and Quantity: 1 register Terminal Type and Quantity: 68 pin | U S Army Aviation and Missile (18876) | |
| 11476911 | 5962-01-467-0416 | Microcircuit, Memory | Inclosure Configuration: Pin grid array Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Asynchronous and high speed and W/enable | U S Army Aviation and Missile (18876) | |
| 11476913 | 5962-01-513-1109 | Microcircuit, Memory | Inclosure Configuration: Pin grid array Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Bidirectional and low power and high speed and synchronous | U S Army Aviation and Missile (18876) | |
| 11476970-002 11476970002 | 5962-01-464-6287 | Microcircuit, Memory | Maximum Power Dissipation Rating: 2.5 watts Operating Temp Range: -55.0/+125.0 deg celsius Storage Temp Range: -65.0/+150.0 deg celsius | Arrow Electronics Inc. (04880) Raytheon Company (49956) Raytheon Technical Services Company (3B150) U S Army Aviation and Missile (18876) | |
| 11476970-003 11476970003 | 5962-01-464-6291 | Microcircuit, Memory | Inclosure Configuration: Pin grid array Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Ultraviolet erasable and electrostatic sensitive | Arrow Electronics Inc. (04880) Raytheon Company (49956) Raytheon Technical Services Company (3B150) U S Army Aviation and Missile (18876) | |
| 11477561 | 5962-01-464-3416 | Microcircuit, Digital | Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Electrostatic sensitive and burn in and low power | U S Army Aviation and Missile (18876) | |
| 11477628 | 5962-01-452-3642 | Microcircuit, Memory | Inclosure Configuration: Pin grid array Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Programmable | U S Army Aviation and Missile (18876) | |
| 11477629 | 5962-01-560-7683 | Microcircuit, Memory | III End Item Identification: 1430-01-418-4396 radar set semi trailer mounted patriot | U S Army Aviation and Missile (18876) | |
| 11477673-1 114776731 | 5962-01-545-2769 | Microcircuit, Digital | III End Item Identification: Radar set semitrailer mounted nsn 1430-01-087-6330 Part Name Assigned By Controlling Agency: Microcircuit digital ttl counter | U S Army Aviation and Missile (18876) |